Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e413d279206a906997a3d92f9addeb9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_696fa618a77046814d460d9958db32cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb77ea1bdd28dcdad0054eaf1973c04c |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
filingDate |
2009-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a2e5e2a6075d73ea199810cf09b4396 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f54b8acaecd41a89b367c7809562ae76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a95028208b1115a1a0edffb3c237c958 |
publicationDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8361551-B2 |
titleOfInvention |
Methods forming high dielectric target layer |
abstract |
In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site of an object. The ligand or the first central atom is then removed to form a second reaction site. A second precursor including a second central atom is then chemisorbed on the second reaction site. |
priorityDate |
2008-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |