Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a5e32438badf68c02528c9cc87ac1b21 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a510749f0ff4e298f245fc86ebf7856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4eb1f3c7d08d0e8f997486544f978253 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-0073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-2065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-2075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-5004 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-26 |
filingDate |
2009-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5598b6f4a639a82f6f080fafe51f08c8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed26e0c721e27a178dac894e8635c4e9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beb516c7c47b8d4ebeb5d4ecdce20fdc |
publicationDate |
2013-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8361237-B2 |
titleOfInvention |
Wet clean compositions for CoWP and porous dielectrics |
abstract |
The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, comprising;n Deionized water; Organic acid; Amine and/or quaternary ammonium hydroxide;n nwherein the formulation is compatible with the CoWP feature and either (a) the molar ratio of amine and/or quaternary ammonium hydroxide to organic acid provides a pH in the range of 7-14; or (b) the formulation includes a corrosion inhibitor.n nn A method of using the formulation is also described. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10190222-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11286444-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10202694-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11306400-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11072767-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11401487-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11407966-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10669637-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11149235-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10415005-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11618867-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10927329-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10519116-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11639487-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9562211-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10696933-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11764145-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9834746-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10253282-B2 |
priorityDate |
2008-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |