Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3b320ecbca73603f0dda46cb0f708dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a53bd912c5951be39d423cf1f6a775fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_70bfc3aa4aa5e54d57f0fa947f3f6c36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_85da8241e3272ed7f8bbe74222dd809f |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4411 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45504 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45512 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45508 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2006-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2012-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67f9a562ea8971482193a41d03233c8d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5bd5216dbf2bd7589a15c2b6acfc5ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_babddd21373ca46f0e41ee0311157282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2892fbb30496b1b6521d91ab4f56793 |
publicationDate |
2012-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8293328-B2 |
titleOfInvention |
Enhanced copper growth with ultrathin barrier layer for high performance interconnects |
abstract |
A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8784563-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012079984-A1 |
priorityDate |
2001-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |