| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33e2de8a1a971d115251ab08af781844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_edd794309b967b1de7aa779975b3906d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2009-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2012-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6ab0d38b15e4e47818280576a8ea53f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b88e5e0057349ab5dc4fdf7f301a5329 |
| publicationDate |
2012-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8187973-B2 |
| titleOfInvention |
Method for manufacturing semiconductor device and the semiconductor device |
| abstract |
A method for manufacturing a semiconductor device which includes: alternately supplying a silicon source and an oxidant to deposit a silicon oxide film on a surface of a semiconductor substrate, wherein the silicon source is supplied under a supply condition where an adsorption amount of molecules of the silicon source on the semiconductor substrate is increased without causing an adsorption saturation of the molecules of the silicon source on the semiconductor substrate, and wherein the oxidant is supplied under a supply condition where impurities remain in the molecules of the silicon source adsorbed on the semiconductor substrate. |
| priorityDate |
2008-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |