| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2007-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bd033ebae527eaa361072f9d737e7f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71b05a409980d2b6b13e9004412bd8af |
| publicationDate |
2011-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7898028-B2 |
| titleOfInvention |
Process for fabricating a strained channel MOSFET device |
| abstract |
A process for fabricating a MOSFET device featuring a channel region comprised with a silicon-germanium component is provided. The process features employ an angled ion implantation procedure to place germanium ions in a region of a semiconductor substrate underlying a conductive gate structure. The presence of raised silicon shapes used as a diffusion source for a subsequent heavily-doped source/drain region, the presence of a conductive gate structure, and the removal of dummy insulator previously located on the conductive gate structure allow the angled implantation procedure to place germanium ions in a portion of the semiconductor substrate to be used for the MOSFET channel region. An anneal procedure results in the formation of the desired silicon-germanium component in the portion of semiconductor substrate to be used for the MOSFET channel region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772878-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8471307-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010025771-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009309140-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8154084-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8828816-B2 |
| priorityDate |
2004-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |