Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24802 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
filingDate |
2008-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2011-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22691f78e0679dc391e7172ba32d0b66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb2910626e751b42b8a2decc3b404169 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e323a4cb9db23f9aabdd93e3f4312259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7631b6bf2080ee446fbb1aa8ceed6b3 |
publicationDate |
2011-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7862982-B2 |
titleOfInvention |
Chemical trim of photoresist lines by means of a tuned overcoat material |
abstract |
A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666436-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8299567-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010209853-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014187027-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014186772-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8785283-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8916337-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10162266-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014154852-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9996008-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9209028-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103913946-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8163466-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8137893-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9373580-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011129652-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I556290-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I587091-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9583344-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9448486-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9209035-B2 |
priorityDate |
2008-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |