http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006257749-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2022
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00
filingDate 2005-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcb18a259160b442473b8f0136531634
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publicationDate 2006-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2006257749-A1
titleOfInvention Method for reducing critical dimension
abstract A method for reducing critical dimension is provided. An exposure process and a develop process are performed on a photoresist layer. An optical trim exposure process is performed between the exposure process and the development process or before the exposure process. The optical trim expsoure process is performed to expose the photoresit layer by using a fully open mask of which the transmission rate is greater than zero. Because of the performance of the optical trim exposure process, the critical dimension of the photoresist layer can be reduced without substantially changing the characteristics of the photoresist layer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006223203-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7547561-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8137893-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9996008-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9209035-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011129652-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7862982-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9583344-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103186038-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009311490-A1
priorityDate 2005-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 32.