| abstract |
A method and a device suitable for implementing this method for etching a substrate ( 10 ), a silicon body in particular, using an inductively coupled plasma ( 14 ) are proposed. For this purpose, a radio-frequency electromagnetic alternating field is generated with an ICP source ( 13 ), the alternating field generating an inductively coupled plasma ( 14 ) of reactive particles in a reactor ( 15 ). The inductively coupled plasma ( 14 ) arises by the action of the radio-frequency electromagnetic alternating field on a reactive gas. Furthermore, a device is provided with which a plasma power injected into the inductively coupled plasma ( 14 ) via the radio-frequency electromagnetic alternating field with the ICP source ( 13 ) is capable of being pulsed so that at least from time to time a pulsed radio-frequency power can be injected into the inductively coupled plasma ( 14 ) as a pulsed radio-frequency power. In addition, the pulsed plasma power can be combined or correlated with a pulsed magnetic field and/or a pulsed substrate electrode power. |