| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2005-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3df16406d855afabe58e6a048c2cdd2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17caee6a09233bedbabc19de785c5a10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d5c4ac97305bbcc1f3a4cd094d805e5 |
| publicationDate |
2010-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7749896-B2 |
| titleOfInvention |
Semiconductor device and method for forming the same |
| abstract |
Semiconductor devices and methods for forming the same in which damages to a low-k dielectric layer therein can be reduced or even prevented are provided. A semiconductor device is provided, comprising a substrate. A dielectric layer with at least one conductive feature therein overlies the substrate. An insulating cap layer overlies the top surface of the low-k dielectric layer adjacent to the conductive feature, wherein the insulating cap layer comprises metal ions. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015371943-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978681-B2 |
| priorityDate |
2005-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |