http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7682480-B2

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00
filingDate 2006-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b2626f3faec7e4180e4fc16286ac1fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_506cff226439a14dfc8e26bab6c49209
publicationDate 2010-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7682480-B2
titleOfInvention Photoresist conditioning with hydrogen ramping
abstract A method for etching a feature in an etch layer through a photoresist mask over a substrate is provided. A substrate with an etch layer disposed below a photoresist mask is placed in a process chamber. The photoresist mask is conditioned, wherein the conditioning comprises providing a conditioning gas comprising a hydrogen containing gas with a flow rate and at least one of a fluorocarbon and a hydrofluorocarbon with a flow rate to the process chamber; and energizing the conditioning gas to form the conditioning plasma. The conditioning plasma is stepped. An etch plasma is provided to the process chamber, wherein the etch plasma is different than the conditioning plasma. A feature is etched in the etch layer with the etch plasma.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8912633-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711365-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011059616-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8759227-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013001754-A1
priorityDate 2004-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6449038-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6326307-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005070117-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S56111246-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6313334-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6040619-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6103457-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5807789-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5843226-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6211092-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6183940-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S57181378-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6228279-B1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11638
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID411556313
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID783
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425193155

Total number of triples: 39.