Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 |
filingDate |
2006-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2010-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b2626f3faec7e4180e4fc16286ac1fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_506cff226439a14dfc8e26bab6c49209 |
publicationDate |
2010-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7682480-B2 |
titleOfInvention |
Photoresist conditioning with hydrogen ramping |
abstract |
A method for etching a feature in an etch layer through a photoresist mask over a substrate is provided. A substrate with an etch layer disposed below a photoresist mask is placed in a process chamber. The photoresist mask is conditioned, wherein the conditioning comprises providing a conditioning gas comprising a hydrogen containing gas with a flow rate and at least one of a fluorocarbon and a hydrofluorocarbon with a flow rate to the process chamber; and energizing the conditioning gas to form the conditioning plasma. The conditioning plasma is stepped. An etch plasma is provided to the process chamber, wherein the etch plasma is different than the conditioning plasma. A feature is etched in the etch layer with the etch plasma. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8912633-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711365-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011059616-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8759227-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013001754-A1 |
priorityDate |
2004-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |