http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S57181378-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4ff9ddf728a7e1a0b36c9cc38b89ad6
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
filingDate 1981-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88b9194fa8054eb18ebddcd4fd810940
publicationDate 1982-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S57181378-A
titleOfInvention Dry etching method
abstract PURPOSE: To improve the fine workability and dimensional controllability of etching by treating resist with the plasma of a gaseous mixture of Freon type gas and H 2 as a fore stage of etching in the gaseous plasma contg. chlorine. n CONSTITUTION: A film consisting of Al or polycrystalline Si is used as a film to be etched. Resist patterns are formed thereon to provide a sample 4. This sample is placed on the lower electrode 3 in a dry etching chamber 1, and a gaseous mixture of gaseous Freon such as CF 4 and H 2 is introduced through a gas introduction hole 1a, and while it is released through a discharge hole 1b, high frequency electric power is applied between parallel electrodes 2 and 3 to induce electric discharge, by which plasma is generated and the resist is treated. Thence, the film is etched by the gaseous plasma contg. Cl such as CCl 4 . In the fore treatment stage for the etching, an org. film contg. F deposits on the resist, thereby improving the etching resistance of the resist. n COPYRIGHT: (C)1982,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7682480-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7053003-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5688719-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5994226-A
priorityDate 1981-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527288

Total number of triples: 19.