| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cea9ef8a774651acafbc785452a2fd64 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
1998-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2000-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68d5c18333e8ccb29c9a75354f64df39 |
| publicationDate |
2000-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6103457-A |
| titleOfInvention |
Method for reducing faceting on a photoresist layer during an etch process |
| abstract |
Disclosed is a method for reducing faceting of a photoresist layer during an etch process. The method includes depositing a metallization layer on a semiconductor substrate, and forming a photoresist layer over at least a portion of the metallization layer. The method also includes treating the photoresist layer with a first plasma so as to harden the photoresist layer against a metal etching plasma. The method further includes exposing the metallization layer and the photoresist layer to the metal etching plasma. The metal etching plasma etches the metallization layer at a substantially faster rate than the treated photoresist layer so that faceting on the photoresist layer is substantially reduced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6828259-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005003310-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6746973-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004129880-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007111110-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006089005-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7605089-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6589713-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6653231-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002142607-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7682480-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007032086-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6518175-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105093821-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101335137-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6630288-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013109136-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6774365-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006124242-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6815359-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6716571-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004102279-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109411332-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101061436-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004102279-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6589709-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006049736-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8597982-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7390753-B2 |
| priorityDate |
1998-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |