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filingDate 2004-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2004102279-A2
titleOfInvention Method of manufacturing an electronic device
abstract A method of manufacturing an electronic device is provided wherein an interconnect is made using 193 nm lithography. No deformation of the desired linewidth takes place in that during a plasma gas is used which dissociates in low-weight ions. The electronic device is particularly an integrated circuit.
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