| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2006-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0add29afc917ffc261024181ad34ba6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b99e07f59662febfa30c8a6673e16e7 |
| publicationDate |
2009-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7517775-B2 |
| titleOfInvention |
Methods of selective deposition of heavily doped epitaxial SiGe |
| abstract |
The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH 4 , an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7737007-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7855126-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011635-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015155381-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8703592-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021035802-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008157091-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079279-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9478656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11557474-B2 |
| priorityDate |
2003-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |