| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1eb9cd2af2f87dcf20b0fbbdfe79996e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2006-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccac03fe3e92530a085eccd730f8b4dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8860fee8d8ab7e9a07e207abc0ef3c7c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5995272754077232f67ea9e55ff490cc |
| publicationDate |
2009-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7482245-B1 |
| titleOfInvention |
Stress profile modulation in STI gap fill |
| abstract |
High density plasma (HDP) techniques form silicon oxide films having sequentially modulated stress profiles. The HDP techniques use low enough temperatures to deposit silicon oxide films in transistor architectures and fabrication processes effective for generating channel strain without adversely impacting transistor integrity. Methods involve partially filling a trench on a substrate with a portion of deposited dielectric using a high density plasma chemical vapor deposition process. The conditions of the process are configured to produce a first stress condition in the first portion of the deposited dielectric. The deposition process condition may then be modified to produce a different stress condition in deposited dielectric. The partially-filled trench may be further filled using the modified deposition process to produce additional dielectric and can be repeated until the trench is filled. Transistor strain can be generated in NMOS or PMOS devices using stress profile modulation in STI gap fill. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9269811-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8951876-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7951683-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10832965-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8921944-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102412184-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102412184-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7906817-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8288292-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8691659-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8895396-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8765561-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8362571-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772120-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7879733-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8133797-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008003766-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7998881-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8647941-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8479683-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8835243-B2 |
| priorityDate |
2006-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |