| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc8b4911c1b6e0ff1ff99c01ccb20eb1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23e2ac849bb39d98efaa7eecc886769c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2011-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33fe454b2522be649c2900fb41f6a6bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_501ccec7355f75258c3e04f8f6e73cd2 |
| publicationDate |
2014-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8921944-B2 |
| titleOfInvention |
Semiconductor device |
| abstract |
A semiconductor device is disclosed. The semiconductor device includes: a substrate; a metal-oxide semiconductor (MOS) transistor disposed in the substrate; and a shallow trench isolation (STI) disposed in the substrate and around the MOS transistor, in which the STI comprises a stress material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043903-B2 |
| priorityDate |
2011-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |