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filingDate 2006-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2009-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2009-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7479464-B2
titleOfInvention Low temperature aerosol deposition of a plasma resistive layer
abstract Embodiments of the present invention provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generator, dispensing the aerosol from the aerosol generator into a processing chamber toward a surface of a substrate, maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius, and depositing a layer from material in the aerosol on the substrate surface.
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