| abstract |
A method is proposed for etching structures into an etching body, in particular, recesses which are laterally precisely defined by an etching mask, into a silicon body, using a plasma. In the process, a high-frequency pulsed, low-frequency modulated high-frequency power is coupled at least intermittently into the etching body using a high-frequency a.c. voltage and, in addition, the intensity of the plasma is modulated as a function of time. |