http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7288479-B2

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filingDate 2005-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43a4dc0d31aa6016dc7428009c19f40c
publicationDate 2007-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7288479-B2
titleOfInvention Method for forming a barrier/seed layer for copper metallization
abstract A method for improving adhesion of Cu to a Ru layer in Cu metallization. The method includes providing a substrate in a process chamber of a deposition system, depositing a Ru layer on the substrate in a chemical vapor deposition process, and forming a Cu seed layer on the Ru layer to prevent oxidation of the Ru layer. The Cu seed layer is partially or completely oxidized prior to performing a Cu bulk plating process on the substrate. The oxidized portion of the Cu seed layer is substantially dissolved and removed from the substrate during interaction with a Cu plating solution, thereby forming a bulk Cu layer with good adhesion to the underlying Ru layer.
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