| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2004-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_701dbb2ca74d0ab5e39f5a7a66924ec2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbd9083b4dfbf9da374ab702570992bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e76ca01bcf22948f57c969a2fc42e189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cb69013e1dbc9dcaa9f54644d0b333e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3abfedc7a32bd8e59de4c793015d863e |
| publicationDate |
2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7232763-B2 |
| titleOfInvention |
Method of manufacturing semiconductor device |
| abstract |
A method of manufacturing a semiconductor device includes subjecting a semiconductor wafer, which includes a copper layer formed above a semiconductor substrate and covered with an insulating film, to a dry etching using a fluorocarbon gas to partially remove the insulating film, thereby at least partially exposing a surface of the copper layer. The copper layer, the surface of which is at least partially exposed is subjected to a nitrogen plasma treatment. The semiconductor wafer having the nitrogen plasma-treated copper layer is exposed to atmosphere, and then the semiconductor wafer is subjected to a surface treatment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011140276-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7682965-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007141833-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010227470-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8236681-B2 |
| priorityDate |
2003-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |