| abstract |
A semiconductor device and manufacturing method, wherein the semiconductor device has a semiconductor substrate on which a plurality of elements constituting a logic type device have been formed; a first interlayer insulating film on the semiconductor substrate; a plurality of groove patterns provided in the first interlayer insulating film; lower interconnections formed by embedding electroconductive films, which are composed of an electroconductive material such as copper, in the groove patterns; and first porous portions that are selectively provided in the portions of the first interlayer insulating film having the lower interconnections formed therein, the portions being in contact with the lower interconnections. A semiconductor device having an interlayer insulating film that exhibits satisfactory mechanical strengths, thermal conductivity and low dielectric constant is thus provided. |