| abstract |
(57) Abstract: A porous film having a relative dielectric constant of 2 or less can be formed by a simple process and at low cost. SOLUTION: A mixed gas of a gas obtained by vaporizing vinyltrimethoxysilane as a silicon alkoxide and an acetylene gas as a gas of an organic compound is introduced into a vacuum chamber, and a plasma made of the mixed gas is generated. By doing so, an organic-inorganic composite film is deposited on the substrate. Next, a mixed gas of a hydrogen gas, a nitrogen gas, and an oxygen gas is introduced into the vacuum chamber, and a plasma made of the mixed gas is generated, thereby performing a hydrogen plasma treatment on the organic-inorganic composite film. Thereby, the organic component of the organic-inorganic composite film is volatilized, and a large number of pores are formed in the trace of the volatilization of the organic component, so that a porous film composed of the organic-inorganic composite film is obtained. |