Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-00 |
filingDate |
2004-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2010-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a533bb89ef253532dbf99c8209714b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_426d8515b4bb453a42da0fed4ccf7e49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_557eda272d6263ef54a669a9df0c36e6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ef6ed6d9f93366121b347a761791ef2 |
publicationDate |
2010-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7645481-B2 |
titleOfInvention |
Fabrication of low dielectric constant insulating film |
abstract |
The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna. |
priorityDate |
2003-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |