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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B7-0092
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00
filingDate 2003-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e3f813b38a48bd0cb8f2e31e34f3c62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce4c8a9e8b5dd9ea5045f2b88701aa43
publicationDate 2005-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6949145-B2
titleOfInvention Vapor-assisted cryogenic cleaning
abstract The present invention is directed towards the use of a reactive gas or vapor of a reactive liquid prior to or in combination with cryogenic cleaning to remove contaminants from the semiconductor surfaces or other substrate surfaces requiring precision cleaning. The reactive gas or vapor is selected according to the contaminants to be removed and the reactivity of the gas or vapor with the contaminants. Preferably, this reaction forms a gaseous byproduct which is removed from the substrate surface by the flow of nitrogen across the surface.
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priorityDate 2002-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 48.