| abstract |
An apparatus and method are provided to treat for example a semiconductor wafer substrate wherein a delivery means for heat, a cryogen, and a fluid chemical reactant, is disposed in a chamber in which the substrate is disposed for at least one surface of the substrate to be cleaned in the chamber. The chamber may also consist of a plurality of stations for chemically treating, providing cryogen to the substrate to effect such cleaning and heating. Air is provided in the chamber in a laminar flow substantially parallel to the surface being treated to remove displaced material from the surface and prevent redeposition of the material on the substrate surface. |