| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249994
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249978
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-249976 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2002-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b04ef119a943a850876a74d90c9bde36 |
| publicationDate |
2005-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6890639-B2 |
| titleOfInvention |
Very low dielectric constant plasma-enhanced CVD films |
| abstract |
The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005215065-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011053462-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006240652-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8349722-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8506359-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011081780-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7060638-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012252227-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006226548-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7825042-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7601631-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009302266-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009093130-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7557035-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7633163-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8778814-B2 |
| priorityDate |
2000-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |