| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-46 |
| filingDate |
2004-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ca56c2ac5429bdac0a077e678d9b4da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f43368f8d5d0b37728016d0c37199d0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea2f4c8b008f38b35cae5d7f6c399222 |
| publicationDate |
2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005215065-A1 |
| titleOfInvention |
Low dielectric constant porous films |
| abstract |
A porous dielectric film for use in electronic devices is disclosed that is formed by removal of soluble nano phase porogens. A silicon based dielectric film having soluble porogens dispersed therein is prepared by chemical vapor deposition (CVD) or by spin on glass (S.O.G.). Examples of preferable porogens include compounds such as germanium oxide (GeO 2 ) and boron oxide (B 2 O 3 ). Hot water can be used in processing to wet etch the film, thereby removing the porogens and providing the porous dielectric film. The silicon based dielectric film may be a carbon doped silicon oxide in order to further reduce the dielectric constant of the film. Additionally, the porous dielectric film may be treated by an electron beam to enhance the electrical and mechanical properties of the film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009093100-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I395268-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8846522-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9293361-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7670924-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014363950-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008038934-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008182403-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006092963-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8399349-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011104891-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7879683-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008182404-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009093112-A1 |
| priorityDate |
2004-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |