Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2002-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2004-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38bbfbf00e84cd420a3480e6d2117584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_709fa93c23a12535325271e1a74a9bea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8fd1ea4a1a0acd28cb6cb0853ad6c94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97b22a44542905014bf649b2d9a83c11 |
publicationDate |
2004-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-6784095-B1 |
titleOfInvention |
Phosphine treatment of low dielectric constant materials in semiconductor device manufacturing |
abstract |
Improved dielectric layers are formed by surface treating the dielectric layer with a phosphine plasma prior to forming a barrier layer thereon. Embodiments include forming a trench in a low k dielectric layer and modifying the side surfaces of the trench by subjecting the dielectric to a phosphine plasma produced in PECVD chamber. A conductive feature is formed by depositing a conformal barrier layer on the low k dielectric including the treated side surfaces of the dielectric and depositing a copper containing layer within the trench. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009104754-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004219799-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6943125-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010102363-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7741663-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009087577-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007275558-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7981483-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I387006-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I584441-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009042443-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007145598-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8192805-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7510967-B2 |
priorityDate |
2001-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |