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filingDate 2002-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6784095-B1
titleOfInvention Phosphine treatment of low dielectric constant materials in semiconductor device manufacturing
abstract Improved dielectric layers are formed by surface treating the dielectric layer with a phosphine plasma prior to forming a barrier layer thereon. Embodiments include forming a trench in a low k dielectric layer and modifying the side surfaces of the trench by subjecting the dielectric to a phosphine plasma produced in PECVD chamber. A conductive feature is formed by depositing a conformal barrier layer on the low k dielectric including the treated side surfaces of the dielectric and depositing a copper containing layer within the trench.
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