http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6679997-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_248fc6d084cdcb1a36f147e9e09965dc |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 1999-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8aeb79f7315638b91e65e35ddd4d02f3 |
| publicationDate | 2004-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-6679997-B2 |
| titleOfInvention | Organic insulation film formation method |
| abstract | The present invention enables reduction of a film thickness of a protection film so as to eliminate destruction caused by stress of the protection film; to increase a film thickness of an organic insulation film so as to exhibit the function of the organic insulation film sufficiently; and to reduce irregularities of the protection film thickness. In the organic insulation film 18 formation method according to the present invention, an organic insulation film 18 , a protection film 20 , and a metal film are successively formed in this order on a substrate 10 . On the metal film, a patterned photo-resist is formed so as to be used as a mask for etching the metal film. The remaining metal film is used as a mask when etching the protection film 20 and the organic insulation film 18 . The protection film 20 can significantly reduce its thickness because the protection film 20 need not be used as a mask. The organic insulation film 18 can be set to an arbitrary thickness regardless of the protection film 20. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006293732-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100932780-B1 |
| priorityDate | 1998-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.