| abstract |
The invention encompasses a method of forming a portion of a transistor structure. A substrate is provided, and a transistor gate is formed over the substrate. The transistor gate has a sidewall. A silicon oxide is deposited over a portion of the substrate proximate the transistor gate by high density plasma deposition. A spacer is formed over the silicon oxide and along the sidewall of the transistor gate. The invention also encompasses a method of oxidizing a portion of a conductive structure. Additionally, the invention encompasses transistor gate structures, as well as structures comprising memory array and peripheral circuitry. |