| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-085 |
| filingDate |
2009-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbab6e33de425350a809c8b88b3abb5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73b3fff5a07032df914e123d735d4d56 |
| publicationDate |
2009-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009134436-A1 |
| titleOfInvention |
Semiconductor device, its manufacturing method and electronic apparatus thereof |
| abstract |
The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS transistor of an LDD structure without having a metal silicide layer of a refractory metal, an area of DRAM cells and the like into a single semiconductor chip. According to the present invention, a semiconductor device is constituted such that an insulating film having a plurality of layers is used, sidewalls at the gate electrodes are formed by etchingback the insulating film of the plurality of layers or a single layer film in the region where metal silicide layers are formed and in the region where the metal silicide layers are not formed, sidewalls composed of an upper layer insulating film is formed on a lower layer insulating film whose surface is coated or the insulating film of the plurality of layers remain unchanged. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010243864-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7913195-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7755150-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007284679-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10756055-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9437631-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008282217-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8957357-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105489623-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10262971-B2 |
| priorityDate |
2002-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |