| abstract |
A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition.The composition comprises(A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of(A-1) compounds represented by the formula (1): R1aSi(OR2)4-a, and(A-2) compounds represented by the formula (2): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c; and(B) a compound represented by the formula (3): R8O (CHCH3CH2O)eR9. |