| abstract |
Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2): n (R 1 ) a Si(R 2 ) 41-a (1) n (R 3 ) b (R 5 ) 3-b Si-R 7 -Si(R 6 ) 3-c (R 4 ) c (2) n wherein R 1 , R 3 and R 4 each independently represents a monovalent hydrocarbon group which may have a substituent; R 2 , R 5 and R 6 each independently represents a hydrolyzable group; R 7 represents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2. |