| abstract |
A method for producing semiconductor device for reducing a gas of halogenated product of a group IVB element with H2 by the ECR plasma CVD method to form a thin film of the group IVB element on a substrate is disclosed. This method includes forming an adhesion layer of the group IVB element in a contact hole, including walls, to be in contact with the exposed substrate, the adhesion layer being formed by reducing with H2 a gas of a halogenated product of the group IVB element in an ECR plasma CVD process, the group IVB element and H2 being used at a flow ratio of 0.4 and greater; forming a barrier layer in contact with the adhesion layer; and filling the contact hole with an electrically conductive material. The stable barrier metal is formed and an upper-layer metallization material is filled within the minute contact hole having a large aspect ratio. |