| abstract |
In a metal film production apparatus, a copper plate member is etched with a Cl 2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl 2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl 2 gas, and the Cl* is supplied into the chamber to withdraw a Cl 2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film. |