| abstract |
A process chamber 25 for processing a semiconductor substrate, comprises a support for supporting a substrate 50 . A gas distributor 90 provided for introducing process gas into the chamber 25 , comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate 50 , into the chamber 25 . Optionally, a gas flow controller 100 controls and pulses the flow of process gas through one or more gas nozzles 140 . An exhaust is used to exhaust the process gas from the chamber 25. |