| abstract |
A method of manufacturing the semiconductor device comprises elements described below; n (a) forming a wiring pattern on an insulating film on a semiconductor substrate, n (b) forming a reflow SiO 2 film having a reflow shape by introducing SiH 4 gas and H 2 O 2 gas into a reaction chamber which accommodates said semiconductor substrate and mutually reacting the SiH 4 and H 2 O 2 gases in a temperature range of about -10° C. to about +10° C. in a vacuum of about 665 Pa or below, n (c) plasma treating a surface of said reflow SiO 2 film by introducing a gas including fluorine into said reaction chamber and discharging plasma in said reaction chamber, and n (d) heat treating said semiconductor substrate. |