http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H08203892-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1995-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_192e16818c6d0a4a37e6fe84bd8b94bf |
| publicationDate | 1996-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H08203892-A |
| titleOfInvention | Semiconductor device manufacturing method and semiconductor manufacturing device |
| abstract | (57) [Abstract] [Purpose] The relative dielectric constant of the reflow insulating film obtained when the reflow insulating film forming technology is adopted in the interlayer insulating film forming process in the multi-layer wiring process of the semiconductor device is high, and the flatness is excellent. It is possible to realize the interlayer insulating film at low cost without performing the flattening process. [Constitution] SiH 4 gas, H 2 O 2 and a fluorine-based gas in a radical state passed through a microwave waveguide 27 are introduced into a reaction chamber 20 accommodating a semiconductor substrate 30 on which an insulating film 33 has been formed, and 665 Pa In the following vacuum, -10 ℃ or more +1 It is characterized in that SiH 4 gas, H 2 O 2 and a fluorine-based gas are reacted with each other within a temperature range of 0 ° C. or less to form a reflow SiO 2 film 34 having a reflow shape on a semiconductor substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6933568-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5981373-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03097897-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-1319125-C http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7902549-B2 |
| priorityDate | 1995-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559562 |
Total number of triples: 20.