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filingDate 1997-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90188b949be9d0e145d6660e556e9c48
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publicationDate 1999-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-5893757-A
titleOfInvention Tapered profile etching method
abstract A method of etching an article having a substrate, an etchable film and a mask layer having a pattern formed therein includes the step of exposing the article to an etchant gas mixture which includes a halogen-containing gas and an inert gas. An etching profile is formed which is substantially smooth across an interface between the etchable film and the mask layer. The method is particularly useful in producing components of articles such as flat-panel displays.
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