| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-564
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 |
| filingDate |
1997-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60c0b31cd85f67d17e5c7c3ff5ba0da1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66610ef1661978617b144f32af239eb5 |
| publicationDate |
1999-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5880518-A |
| titleOfInvention |
Semiconductor device including a two-layer protective insulating layer |
| abstract |
A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003186526-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1225194-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8598049-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6511923-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013135765-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102812539-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015103504-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012258604-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104185909-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10998335-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6812140-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102812539-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6319849-B1 |
| priorityDate |
1996-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |