| abstract |
In a method of manufacturing an insulating film of a semiconductor device by a chemical vapor deposition, a surface of a semiconductor wafer is treated with an organic compound such as ethanol and methanol, and then the semiconductor wafer is transported into a reaction chamber and an insulating film is deposited on the thus treated surface of the semiconductor wafer by a chemical vapor deposition using a raw material such as organic silicon compound. By treating the surface of the semiconductor wafer with the organic compound prior to the deposition, the filling capability and planarization of the insulating film are improved. Further the insulating film thus formed is free from voids and clacks, and an amount of water contained in the insulating film is very small. The treatment of the surface of the semiconductor wafer can be performed simply by spin coating, spaying, vapor exposing or dipping, so that the throughput can be improved. Moreover, a gas of said organic compound for treating the surface of the semiconductor wafer may be mixed with raw material gas and reaction gas in the reaction chamber. |