| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-974
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-91 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02307
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
1968-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1972-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d01d782afa9ff50921afad351310ffb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fe1d9ac10254a83fd7cd84e5d2866b5 |
| publicationDate |
1972-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-3698948-A |
| titleOfInvention |
Fabrication of a silicon-silicon dioxide interface of predetermined space charge polarity |
| abstract |
IN THE FABRICATION OF A SEMICONDUCTOR DEVICE HAVING A SILICON-SILICON DIOXIDE INTERFACE, THE POLARITY OF THE SPACE CHARGE REGION ASSOCIATED WITH THE INTERFACE IS PREDETERMINED BY A METHOD WHICH BEGINS WITH THE STEP OF PRETREATING THE SILICON SURFACE WITH A SELECTED REAGENT CAPABLE OF INDUCING THE DESIRED SPACE CHARGE POLARITY. FOR EXAMPLE, A PRETREATMENT WITH CHROMIC ACID INDUCES A NEGATIVE SPACE CHARGE REGION, WHEREAS A PRETREATMENT WITH NITRIC ACID INDUCES A POSITIVE CHARGE. THE INTERFACE IS THEN FORMED BY VAPOR DEPOSITION OF A SLICON DIOXIDE LAYER ON THE SILICON SURFACE. THE PRETREATMENT HAS BEEN FOUND CAPABLE OF INDUCING A PREDETERMINED CHARGE WHEN THE INTERFACE IS PROVIDED BY VAPOR DEPOSITION, BUT IS WHOLLY INEFFECTIVE WHEN THE INTERFACE IS PROVIDED BY THERMAL OXIDATION. IT IS WELL KNOWN THAT THERMAL OXIDATION OF A SILICON SURFACE INHERENTLY PRODUCES AN INTERFACE HAVING A POSITIVE SPACE CHARGE REGION. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4371587-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4430120-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4567061-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5605867-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5132244-A |
| priorityDate |
1968-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |