| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-951
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66871 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 |
| filingDate |
1987-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1989-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5312c1ea9b320c84a2e3c1cc4891bd4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_227c5415868561b5be5fcabf049f122c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc27cee04900445fd430fd3da057dedf |
| publicationDate |
1989-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-4808545-A |
| titleOfInvention |
High speed GaAs MESFET having refractory contacts and a self-aligned cold gate fabrication process |
| abstract |
Disclosed is a process fo fabrication of a MESFET in which starting with a GaAs substrate having a shallow N- layer covered with nitride, a submicron-wide dummy gate mask consisting of upper and lower portions made of dissimilar materials is formed. Multilayer organic and sidewall image transfer techniques are employed for forming the mask. The nitride is etched using the gate mask. N+ source/drain are formed by ion implantation. The lower portion of the gate mask is etched to expose the periphery of the nitride. Refractory metal for source/drain contacts is deposited. An oxide laeyr is deposited to passivate the source/drain contacts and to fully cover the exposed nitride periphery. The gate mask is removed. High temperature anneal is accomplished to simultaneously activate the N+ regions and anneal the contact metal. By RIE the exposed nitride removed leaving submicron spacers thereof. Gate metal is deposited in the gate region. Excess gate metal is removed to obtain a gate which has a planar top and has little lapping over the source/drain contacts. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9236298-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112420821-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006194041-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5858843-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2593414-C1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9245791-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004155711-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7794614-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101410170-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9209126-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112420821-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007105319-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7358140-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006182935-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5023676-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006093575-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8822137-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6130121-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008296737-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003115750-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7698817-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5384269-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6566759-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006208379-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8691697-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8900988-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4892835-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007054115-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8557675-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5220186-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9054160-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6605872-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4975382-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8669186-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4961822-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8795556-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5447874-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9490202-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4997778-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6251776-B1 |
| priorityDate |
1987-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |