| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26553 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
1994-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1995-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f551c29c1b780921a1690b5d98e37f9 |
| publicationDate |
1995-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5384269-A |
| titleOfInvention |
Methods for making and using a shallow semiconductor junction |
| abstract |
A method for making a shallow junction in a gallium arsenide substrate including implanting doping ions into an upper surface of the substrate and incorporating sulfur into the upper surface of the substrate after the ion implantation. A capping layer is deposited on the upper surface and the substrate is heat annealed to activate the doping atoms. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018151505-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8697467-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003118872-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8884367-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10453797-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6929831-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009096019-A1 |
| priorityDate |
1992-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |