| abstract |
A patterning process is provided wherein a material to be etched is coated with a ladder type organosiloxane resin, the coated resin is irradiated with energy rays according to a desired pattern, the irradiated resin is subjected to a development treatment, and then, the material is etched by using the resin left after the development as a mask. The ladder type organosiloxane resin used is represented by the formula: ##STR1## wherein each R 1 is independently selected from alkyl (Cl-6) groups, and phenyl and halophenyl groups, R 2 , R 3 , R 4 and R 5 are independently selected from hydrogen, alkoxy (Cl-3) groups, a hydroxyl group and alkyl (Cl-3) groups, and n is a number giving a Mw of about 1,000 to about 1,000,000. The patterning process can be advantageously employed for the production of electronic devices. |