| abstract |
Novel method for the production of high purity metal sulfides, selenides, tellurides, and arsenides, particularly those of high melting point greater than 1,000* C, e.g., such compounds of the rare earth metals. An anhydrous metal, metal salt, metal oxide or mixtures thereof is contacted with a gas mixture, e.g., H2S and CS2 at a high temperature, e.g., in the range of about 1,250* C to about 1,325* C, in the substantial absence of water vapor and oxygen until the product has been formed. The metal sulfides, tellurides, selenides, and arsenides thus produced are formed into single crystals which are useful as semi-conductors, transistors, etc. |