| abstract |
Complementary MIS-FET devices are fabricated with accurately controlled geometric and electrical properties so as to provide improvement in matching composite characteristics of device pairs, resulting in reduced power dissipation and increased speed of operation. As a related consideration, fabrication of these devices is described providing improved temperature-bias stability and radiation resistant properties. To realize the noted improvements self-aligning registration techniques are employed coupled with a simultaneous diffusion of drain and source regions. Further, improved gate dielectric compositions are employed. |