| abstract |
Disclosed is a method of producing a semiconductor device in which a p-n junction and an ohmic contact with the semiconductor substrate are simultaneously formed. A layer of a metal containing an impurity of one conductivity type is deposited on a surface of a semiconductor body of the opposite conductivity type. The metal layer is then subjected to heat treatment, thereby to cause the impurity to diffuse into the semiconductor body to form the p-n junction. At the same time, a compound is formed of the metal and the semiconductor which serves as an ohmic contact with the semiconductor body at the region in which the impurity is diffused. |