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filingDate 2022-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2022336224-A1
titleOfInvention Method of etching film and plasma processing apparatus
abstract A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method comprises performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further comprises forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further comprises performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.
priorityDate 2019-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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