| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| filingDate |
2015-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15c31ac78394568dea434cbc69f28a69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b49bf7057063fb9aa67c139463a68100
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4abdc4fed9f5690ece3e4cc124d3c2c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33b0ef2dd4bd9622eb89f8bba4eda9ca |
| publicationDate |
2017-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017092765-A1 |
| titleOfInvention |
Tensile strained high percentage silicon germanium alloy finfets |
| abstract |
A thermal mixing process is employed to convert a portion of a silicon germanium alloy fin having a first germanium content and an overlying non-doped epitaxial silicon source material into a silicon germanium alloy source structure having a second germanium content that is less than the first germanium content, to convert another portion of the silicon germanium alloy fin and an overlying non-doped epitaxial silicon drain material into a silicon germanium alloy drain structure having the second germanium content, and to provide a tensile strained silicon germanium alloy fin portion having the first germanium content. A dopant is then introduced into the silicon germanium alloy source structure and into the silicon germanium alloy drain structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10243061-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11652161-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573750-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019097051-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10727315-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11049953-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10686074-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004978-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10109709-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018261696-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015357411-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079181-B2 |
| priorityDate |
2015-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |